Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays
Identifieur interne : 000024 ( Main/Repository ); précédent : 000023; suivant : 000025Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays
Auteurs : RBID : Pascal:14-0096886Descripteurs français
- Pascal (Inist)
- Dépendance température, Effet Hall, Propriété électrique, Nanocristal, Nanomatériau, Réseau(arrangement), Effet température, Synthèse nanomatériau, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Métal complexe, Ligand, Couche mince, Sulfure de cuivre, Mobilité Hall, Dopage, Etude comparative, Transport charge, Cu7S4, 8107B, 8116, 7363.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Arrays, Charge transport, Comparative study, Copper sulfide, Doping, Electrical properties, Hall effect, Hall mobility, III-V compound, III-V semiconductors, Indium arsenides, Ligands, Metal complex, Nanocrystal, Nanomaterial synthesis, Nanostructured materials, Temperature dependence, Temperature effects, Thin films.
Abstract
We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se42- and Cu7S4-). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm2/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays</title><author><name>JAEYOUNG JANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry and James Franck Institute, University of Chicago</s1><s2>Illinois 60637</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Illinois 60637</wicri:noRegion></affiliation></author><author><name>WENYONG LIU</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry and James Franck Institute, University of Chicago</s1><s2>Illinois 60637</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Illinois 60637</wicri:noRegion></affiliation></author><author><name>JAE SUNG SON</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry and James Franck Institute, University of Chicago</s1><s2>Illinois 60637</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Illinois 60637</wicri:noRegion></affiliation></author><author><name sortKey="Talapin, Dmitri V" uniqKey="Talapin D">Dmitri V. Talapin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry and James Franck Institute, University of Chicago</s1><s2>Illinois 60637</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Illinois 60637</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Center for Nanoscale Materials, Argonne National Laboratory</s1><s2>Argonne, Illinois 60439</s2><s3>USA</s3><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Argonne, Illinois 60439</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0096886</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0096886 INIST</idno><idno type="RBID">Pascal:14-0096886</idno><idno type="wicri:Area/Main/Corpus">000023</idno><idno type="wicri:Area/Main/Repository">000024</idno></publicationStmt><seriesStmt><idno type="ISSN">1530-6984</idno><title level="j" type="abbreviated">Nano lett. : (Print)</title><title level="j" type="main">Nano letters : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term><term>Charge transport</term><term>Comparative study</term><term>Copper sulfide</term><term>Doping</term><term>Electrical properties</term><term>Hall effect</term><term>Hall mobility</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Ligands</term><term>Metal complex</term><term>Nanocrystal</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Temperature dependence</term><term>Temperature effects</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépendance température</term><term>Effet Hall</term><term>Propriété électrique</term><term>Nanocristal</term><term>Nanomatériau</term><term>Réseau(arrangement)</term><term>Effet température</term><term>Synthèse nanomatériau</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Métal complexe</term><term>Ligand</term><term>Couche mince</term><term>Sulfure de cuivre</term><term>Mobilité Hall</term><term>Dopage</term><term>Etude comparative</term><term>Transport charge</term><term>Cu7S4</term><term>8107B</term><term>8116</term><term>7363</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In<sub>2</sub>Se<sub>4</sub><sup>2-</sup> and Cu<sub>7</sub>S<sub>4</sub><sup>-</sup>). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm<sup>2</sup>/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1530-6984</s0></fA01><fA03 i2="1"><s0>Nano lett. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays</s1></fA08><fA11 i1="01" i2="1"><s1>JAEYOUNG JANG</s1></fA11><fA11 i1="02" i2="1"><s1>WENYONG LIU</s1></fA11><fA11 i1="03" i2="1"><s1>JAE SUNG SON</s1></fA11><fA11 i1="04" i2="1"><s1>TALAPIN (Dmitri V.)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry and James Franck Institute, University of Chicago</s1><s2>Illinois 60637</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Center for Nanoscale Materials, Argonne National Laboratory</s1><s2>Argonne, Illinois 60439</s2><s3>USA</s3><sZ>4 aut.</sZ></fA14><fA20><s1>653-662</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27369</s2><s5>354000506135620390</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>65 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0096886</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nano letters : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In<sub>2</sub>Se<sub>4</sub><sup>2-</sup> and Cu<sub>7</sub>S<sub>4</sub><sup>-</sup>). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm<sup>2</sup>/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07B</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A16</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C63</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Dépendance température</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet Hall</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Hall effect</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electrical properties</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Nanocristal</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Nanocristal</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Réseau(arrangement)</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Arrays</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Effet température</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Temperature effects</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Composé III-V</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>III-V compound</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Métal complexe</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Metal complex</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Metal complejo</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Ligand</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Ligands</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Couche mince</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Thin films</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Mobilité Hall</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Hall mobility</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Dopage</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Doping</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Doping</s0><s5>31</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Etude comparative</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Comparative study</s0><s5>32</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Estudio comparativo</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Transport charge</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Charge transport</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Cu7S4</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8107B</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8116</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7363</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>132</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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